Schottky barrier height at metal/ZnO interface: A first-principles study
نویسندگان
چکیده
منابع مشابه
Inhomogeneity in barrier height at graphene/Si (GaAs) Schottky junctions.
Graphene (Gr) interfaced with a semiconductor forms a Schottky junction with rectifying properties, however, fluctuations in the Schottky barrier height are often observed. In this work, Schottky junctions are fabricated by transferring chemical vapor deposited monolayer Gr onto n-type Si and GaAs substrates. Temperature dependence of the barrier height and ideality factor are obtained by curre...
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ژورنال
عنوان ژورنال: Microelectronic Engineering
سال: 2019
ISSN: 0167-9317
DOI: 10.1016/j.mee.2019.111056